HMC484MS8G Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz

v01.0404
MICROWAVE CORPORATION
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH
DC - 3.0 GHz
14
Typical 0.5 to 3.0 GHz
Compression vs. Bias Voltage (Vdd)
Bias Vdd
(Volts)
+3
+5
+8
+10
Input Power for 0.1 dB
Compression
(dBm)
32
36
39
>40
Input Power for 1.0 dB
Compression
(dBm)
35.5
40
>40
>40
Bias Voltage & Current
Vdd (Vdc)
+3
+5
+8
+10
Typical Idd (µA)
0.5
10
50
75
Control Voltages
State
Bias Condition
Low
0 to +0.2 Vdc @ 10 µA Typical
High
Vdd ± 0.2 Vdc @ 10 µA Typical
Outline Drawing
Absolute Maximum Ratings
RF Input Power (Vctl = 0V/+8V)
(0.5 - 3 GHz)
+40 dBm (T = +85 °C)
Supply Voltage Range (Vdd)
(Vctl = 0V)
+13 Vdc
Control Voltage Range (A & B)
Vdd - 13 Vdc to Vdd + 0.7 Vdc
Hot Switch Power Level
(Vdd = +8V)
39 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 25 mW/°C above 85 °C)
1.6 W
Thermal Resistance
40 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
Truth Table
Control Input (Vctl)
A
B
High
Low
Low
High
Low
Low
Signal Path State
RFC to RF1 RFC to RF2
Off
On
On
Off
Off
Off
14 - 264
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
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