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HMC463_10 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
v10.1010
HMC463
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
1
Description
This pad is AC coupled and matched to 50 Ohms.
Interface Schematic
2
Vgg2
Optional gate control if AGC is required.
Leave Vgg2 open circuited if AGC is not required.
3
Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required
4
RFOUT
This pad is AC coupled and matched to 50 Ohms.
5
Vgg1
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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