HMC463_10 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz

v10.1010
Gain @ Several Control Voltages
20
18 Vgg 2 = -1.0V Vgg 2 = -0.9V Vgg 2 = -0.6V Vgg 2 = -0.4V Vgg 2 = 0V
16
14
12
10
8
6
4
Vgg 2 = -1.1V
2
Vgg 2 = -1.2V
0
-2
Vgg 2 = -1.3V
-4
-6
-8
-10
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Current (Igg1)
Gate Bias Voltage (Vgg2)(AGC)
RF Input Power (RFIN)(Vdd = +5 V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 20.6 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+9 V
-2 to 0 Vdc
2.5 mA
(Vdd -9)
Vdc to +2 Vdc
+18 dBm
175 °C
1.85 W
48.6 °C/W
-65 to +150 °C
-55 to +85 °C
HMC463
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
1
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
Idd (mA)
58
60
62
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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