HMC457QS16G Datasheet, PDF (6/10 Pages) Hittite Microwave Corporation – InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz

v00.0904
Power Dissipation
3
Max Pdiss @ +85C
2.8
2.6
2.4
1900 MHz
2.2
2
1.8
2100 MHz
1.6
1.4
1.2
1
-10 -8 -6 -4 -2 0 2 4 6 8 10
INPUT POWER (dBm)
Typical Supply Current
vs. Supply Voltage
Vs (V)
Icq (mA)
4.5
400
5.0
510
5.5
620
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
8
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Control Voltage (Vpd)
+5.4 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 42.9 mW/°C above 85 °C)
2.78 W
Thermal Resistance
(junction to ground paddle)
23.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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