HMC454ST89_07 Datasheet, PDF (6/12 Pages) Hittite Microwave Corporation – InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz

v04.0907
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vs = +5.0
Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 13.6 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+6.0 Vdc
+25 dBm
150 °C
0.890 W
73 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC454ST89 / 454ST89E
InGaP HBT ½ WATT HIGH IP3
AMPLIFIER, 0.4 - 2.5 GHz
9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC454ST89
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC454ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking ^[3]
H454
XXXX
H454
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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