HMC667LP2 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz

v02.1110
7
Gain & Return Loss w/ SDARS Tune ^[1]
25
20
15
10
5
0
-5
-10
-15
-20
-25
2.25
S11
S22
S21
2.3
2.35
2.4
FREQUENCY (GHz)
2.45
HMC667LP2 / 667LP2E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Noise Figure vs. Vdd w/ SDARS Tune ^[2]
1.6
1.4
1.2
Vdd=5V
Vdd=3V
1
0.8
0.6
0.4
0.2
2.25
2.3
2.35
2.4
2.45
FREQUENCY (GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 5.88 mW/°C above 85 °C)
Thermal Resistance
(Channel to Ground Paddle)
Storage Temperature
Operating Temperature
+6 Vdc
+10 dBm
150 °C
0.38 W
170 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
7-5
[1] Vdd = 5V [2] Measurement reference plane shown on evaluation PCB drawing.
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Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
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