HMC636ST89 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz

Pin Descriptions
Pin Number
Function
1
RFIN
HMC636ST89 / 636ST89E
v00.1107
GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
Description
This pin is DC coupled. An off-chip
DC blocking capacitor is required.
Interface Schematic
6
3
RFOUT
2, 4
GND
RF Output and DC BIAS for the amplifier.
See Application Circuit for off-chip components.
These pins and package bottom must
be connected to RF/DC ground.
Application Circuit
6 - 330
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com