HMC636ST89 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz

v00.1107
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 13.3 mW/°C above 85 °C)
Thermal Resistance
(Channel to lead)
Storage Temperature
Operating Temperature
+5.5 Volts
+16 dBm
150 °C
0.86 W
75.6 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC636ST89 / 636ST89E
GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
6
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC636ST89
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC636ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking ^[3]
H636
XXXX
H636
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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