HMC609_10 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz

1
Pad Descriptions
Pad Number
Function
1
RFIN
2, 5, 6, 10
Die Bottom
GND
3, 4
Vdd1, Vdd2
7
RFOUT
v03.0210
HMC609
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
Description
This pad is AC coupled and
matched to 50 Ohms.
These pads & die bottom must be
connected to RF/DC ground.
Power Supply Voltage for the amplifier.
External bypass capacitors of
100 pF & 0.1 μF are required.
This pad is AC coupled and
matched to 50 Ohms.
Interface Schematic
8, 9
Vgg2, Vgg1
Gates supply voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
Assembly Diagram
1 - 112
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