HMC609_10 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz

v03.0210
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 18 mW/°C above 85 °C)
Thermal Resistance
(channel to ground pad)
Storage Temperature
Operating Temperature
7 Vdc
+15 dBm
175 °C
1.64 W
55 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC609
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
1
Typical Supply Current vs. Vdd
Vdd (V)
+5.5
+6.0
+6.5
Idd (mA)
160
170
180
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.007”
3. TYPICAL BOND PAD IS 0.004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE ±0.002”
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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