HMC608LC4_10 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz

Outline Drawing
v02.1208
HMC608LC4
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
9
9-5
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
Gate control for amplifier. Adjust to achieve Id of 310 mA.
1
Vgg
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF,
1000 pF and 2.2 µF are required.
2, 3, 7 - 12,
16 - 18, 22, 24
4, 6, 13, 15
5
14
N/C
GND
RFIN
RFOUT
No connection required. These pins may be connected to
RF/DC ground without affecting performance.
Package bottom has an exposed metal paddle that must
also be connected to RF/DC ground.
This pin is AC coupled and matched to 50 Ohms.
This pin is AC coupled and matched to 50 Ohms.
21, 20, 19
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1000pF, and 2.2 µF are required.
High gain (connect to ground) / low gain mode
23
Vpd
pin control (open circuit). External bypass capacitors of
100 pF, 1000 pF and 2.2 µF are required.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]