HMC608LC4_10 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz

v01.0707
HMC608LC4
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Low Gain Mode,
Broadband Gain & Return Loss
25
Low Gain Mode, Gain vs. Temperature
30
15
S21
5
S11
S22
-5
-15
-25
-35
7
8
9
10
11
12
13
14
FREQUENCY (GHz)
26
22
18
14
10
9
+25C
+85C
-40C
9.5
10
10.5
11
FREQUENCY (GHz)
11.5
9
Low Gain Mode,
Input Return Loss vs. Temperature
0
-4
-8
-12
-16
+25C
+85C
-40C
-20
-24
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
Low Gain Mode,
Output Return Loss vs. Temperature
0
-5
-10
+25C
+85C
-40C
-15
-20
-25
-30
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +5Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 22.18 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
7 Vdc
-4.0 to -1.0 Vdc
+10 dBm
175 °C
2W
45 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+4.5
300
+5.0
310
+5.5
325
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 310 mA at +5V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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