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HMC519_09 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz
1
Pad Descriptions
Pad Number
Function
1
RFIN
v01.0907
HMC519
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
Description
This pad is AC coupled
and matched to 50 Ohms.
Interface Schematic
2, 3, 4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
5
6, 7, 8
RFOUT
Vgg3, Vgg2, Vgg1
Die Bottom
GND
This pad is AC coupled
and matched to 50 Ohms.
These pads must be connected to RF/DC
ground for proper operation.
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
1 - 76
Note: Vgg1, Vgg2 and Vgg3 must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com