HMC519_09 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz

v01.0907
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+8 dBm
175 °C
2.65 W
34 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
Outline Drawing
HMC519
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
1
Typical Supply Current vs. Vdd
Vdd (Vdc)
+2.5
+3.0
+3.5
Idd (mA)
61
65
69
Note: Amplifier will operate over full voltage ranges shown
above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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