HMC491LP3 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.4 - 3.8 GHz

MICROWAVE CORPORATION
v00.0503
HMC491LP3
GaAs MMIC LOW NOISE AMPLIFIER
w/ BYPASS MODE, 3.4 - 3.8 GHz
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+7.0 Vdc
RF Input Power (RFin)
(Vdd = +3.0 Vdc)
LNA Mode 0 dBm
Bypass Mode +30 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 1.8 mW/°C above 85 °C)
0.117 W
Thermal Resistance
(channel to ground paddle)
556 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (Vdc)
+2.7
+3.0
+3.3
Idd (mA)
7.6
9.0
10.2
Truth Table
LNA Mode
Vctl= Vdd @ 1.6 mA
Bypass Mode
Vctl= 0Vdc @ -13 µA
Vdd= +3V ±10%
Outline Drawing
8 - 264
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com