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HMC478ST89_10 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz
Pin Descriptions
8
Pin Number
Function
1
RFIN
3
RFOUT
2, 4
GND
v05.0710
HMC478ST89 / 478ST89E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
RF output and DC Bias (Vcc) for the output stage.
These pins and package bottom
must be connected to RF/DC ground.
Interface Schematic
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
5V
18 Ω
1/8 W
6V
35 Ω
1/4 W
8V
67 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
8 - 108
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 μF
900
56 nH
100 pF
Frequency (MHz)
1900
2200
18 nH
18 nH
100 pF
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com