HMC478ST89_10 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz

v05.0710
P1dB vs. Temperature
8
24
20
16
12
8
+25C
+85C
-40C
4
0
0
1
2
3
4
5
FREQUENCY (GHz)
Output IP3 vs. Temperature
35
30
25
20
+25C
15
+85C
-40C
10
0
1
2
3
4
5
FREQUENCY (GHz)
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, RBIAS= 18 Ohms
80
75
+85C
70
65
+25C
60
55
50
-40C
45
40
3.8 3.85 3.9 3.95
4 4.05 4.1 4.15 4.2 4.25 4.3
Vcc (V)
HMC478ST89 / 478ST89E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Psat vs. Temperature
24
20
16
12
+25C
8
+85C
-40C
4
0
0
1
2
3
4
5
FREQUENCY (GHz)
Gain, Power & Output IP3 vs. Supply
Voltage for Constant Icc= 62 mA @ 850 MHz
36
32
28
24
20
16
12
Gain
P1dB
8
Psat
IP3
4
0
5
6
7
8
Vs (V)
Gain, Power & Output IP3 vs. Supply
Voltage for Rs = 18 Ohms @ 850 MHz
36
32
28
24
20
16
12
8
4
0
4.5
Gain
P1dB
Psat
IP3
5
5.5
Vs (V)
8 - 106
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