HMC461LP3 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz

v01.0604
MICROWAVE CORPORATION
8
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2) +6.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc) +30 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 32 mW/°C above 85 °C)
2.08 W
Thermal Resistance
(junction to ground paddle)
31 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Outline Drawing
HMC461LP3
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
8 - 276
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
Specifications and data reflect HMC461LP3 measured with external baluns in a balanced
amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein.
Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com