HMC455LP3_09 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz

v02.0605
Outline Drawing
11
HMC455LP3 / 455LP3E
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC455LP3
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC455LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking ^[3]
455
XXXX
455
XXXX
Pin Descriptions
Pin Number
1, 2, 4 - 9,
11 - 16
Function
N/C
3
RFIN
10
RFOUT
Description
This pin may be connected to RF ground.
This pin is AC coupled.
An off chip series matching capacitor is required.
RF output and DC Bias for the output stage.
Interface Schematic
GND
Package bottom must be connected to RF/DC ground.
11 - 238
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com