HMC455LP3_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz

HMC455LP3 / 455LP3E
v02.0605
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
11
Typical Applications
This amplifier is ideal for high linearity applications:
• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & WCDMA
• PHS
Functional Diagram
Features
Output IP3: +42 dBm
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3x3 mm QFN SMT Package
General Description
The HMC455LP3 & HMC455LP3E are high output
IP3 GaAs InGaP Heterojunction Bipolar Transistor
(HBT) ½ watt MMIC amplifiers operating between 1.7
and 2.5 GHz. Utilizing a minimum number of external
components the amplifier provides 13 dB of gain and
+28 dBm of saturated power at 56% PAE from a single
+5 Vdc supply voltage. The high output IP3 of +42
dBm coupled with the low VSWR of 1.4:1 make the
HMC455LP3 & HMC455LP3E ideal driver amplifiers for
PCS/3G wireless infrastructures. A low cost, leadless
3x3 mm QFN surface mount package (LP3) houses
the linear amplifier. The LP3 provides an exposed
base for excellent RF and thermal performance.
Electrical Specifications, T_A = +25° C, Vs= +5V
Parameter
Frequency Range
Gain
Min. Typ. Max.
1.7 - 1.9
11.5 13.5
Min.
Typ. Max. Min. Typ. Max.
1.9 - 2.2
2.2 - 2.5
10.5
13
9
11.5
Gain Variation Over Temperature
0.012 0.02
0.012 0.02
0.012 0.02
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
13
10
24
27
28.5
37
40
7
150
15
18
24.5
27.5
28
39
42
6
150
10
15
23
26
27
37
40
6
150
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
11 - 234
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com