HMC455LP3 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz

v01.0604
MICROWAVE CORPORATION
HMC455LP3
GaAs InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
8
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc) +30 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 16 mW/°C above 85 °C)
1.04 W
Thermal Resistance
(junction to ground paddle)
63 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Outline Drawing
8 - 268
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com