HMC455LP3 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz

v01.0604
MICROWAVE CORPORATION
HMC455LP3
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
8
Typical Applications
Features
This amplifier is ideal for high linearity applications:
Output IP3: +42 dBm
• Multi-Carrier Systems
Gain: 13 dB
• GSM, GPRS & EDGE
56% PAE @ +28 dBm Pout
• CDMA & WCDMA
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
• PHS
3 x 3 x 1 mm QFN SMT Package
Functional Diagram
General Description
The HMC455LP3 is a high output IP3 GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
½ watt MMIC amplifier operating between 1.7
and 2.5 GHz. Utilizing a minimum number of
external components the amplifier provides 13
dB of gain and +28 dBm of saturated power at
56% PAE from a single +5 Vdc supply voltage.
The high output IP3 of +42 dBm coupled with
the low VSWR of 1.4:1 makes the HMC455LP3
an ideal driver amplifier for PCS/3G wireless
infrastructure. A low cost, leadless 3x3 mm QFN
surface mount package (LP3) houses the linear
amplifier. The LP3 provides an exposed base for
excellent RF and thermal performance.
8 - 264
Electrical Specifications, T_A = +25° C, Vs= +5V
Parameter
Min. Typ. Max. Min.
Typ. Max. Min. Typ. Max.
Frequency Range
1.7 - 1.9
1.9 - 2.2
2.2 - 2.5
Gain
11.5 13.5
10.5
13
9
11.5
Gain Variation Over Temperature
0.012 0.02
0.012 0.02
0.012 0.02
Input Return Loss
13
15
10
Output Return Loss
10
18
15
Output Power for 1dB Compression (P1dB)
24
27
24.5
27.5
23
26
Saturated Output Power (Psat)
28.5
28
27
Output Third Order Intercept (IP3)
37
40
39
42
37
40
Noise Figure
7
6
6
Supply Current (Icq)
150
150
150
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com