HMC413QS16G Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz

v03.1203
MICROWAVE CORPORATION
HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
8
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd1, Vpd2)
+4.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc,
Vpd = +3.6 Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
1.56 W
Thermal Resistance
(junction to ground paddle)
42 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
8 - 170
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