HMC407MS8G Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz

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MICROWAVE CORPORATION
HMC407MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
8
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vcc1
Power supply voltage for the first amplifier stage. An external bypass capacitor of
330 pF is required as shown in the application schematic.
Power control pin. For maximum power, this pin should be connected to 5.0V. A
2
Vpd
higher voltage is not recommended. For lower die current, this voltage can be
reduced.
3, 6, 7
GND
Ground: Backside of package has exposed metal ground slug that must be con-
nected to ground thru a short path. Vias under the device are required.
4
RF IN
This pin is AC coupled and matched to 50 Ohms from 5.0 to 7.0 GHz.
5
RF OUT
This pin is AC coupled and matched to 50 Ohms from 5.0 to 7.0 GHz.
Power supply voltage for the output amplifier stage. An external bypass capacitor
8
Vcc2
of 330 pF is required. This capacitor should be placed no more than 20 mils form
package lead.
8 - 154
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