HMC407MS8G Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz

v01.1202
MICROWAVE CORPORATION
HMC407MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
8
Typical Applications
This amplifier is ideal for use as a power
amplifier for 5.0 - 7.0 GHz applications:
• UNII
• HiperLAN
Functional Diagram
Features
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5.0 V
Power Down Capability
No External Matching Required
General Description
The HMC407MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
5 and 7 GHz. The amplifier requires no external
matching to achieve operation and is thus truly 50
Ohm matched at input and output. The amplifier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF
and thermal performance. The amplifier provides
15 dB of gain, +29 dBm of saturated power at
28% PAE from a +5.0V supply voltage. Power
down capability is available to conserve current
consumption when the amplifier is not in use.
Electrical Specifications, T_A = +25° C, Vs = 5V, Vpd = 5V
Parameter
Min.
Typ.
Max.
Frequency Range
5.0 - 7.0
Gain
10
15
18
Gain Variation Over Temperature
0.025
0.035
Input Return Loss
12
Output Return Loss
15
Output Power for 1 dB Compression (P1dB)
21
25
Saturated Output Power (Psat)
29
Output Third Order Intercept (IP3)
32
37
Noise Figure
5.5
Supply Current (Icq)
Vpd = 0V/5V
0.002 / 230
Control Current (Ipd)
Vpd = 5V
7
Switching Speed
tON, tOFF
30
Min.
Typ.
Max. Units
5.6 - 6.0
GHz
12
15
18
dB
0.025
0.035 dB/ °C
12
dB
15
dB
22
25
dBm
29
dBm
36
40
dBm
5.5
dB
0.002 / 230
mA
7
mA
30
ns
8 - 150
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com