HMC659_09 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz

v01.0708
Power Compression @ 2 GHz
32
28
24
20
16
12
8
Pout
Gain
4
PAE
0
0
3
6
9
12
15
INPUT POWER (dBm)
Power Compression @ 15 GHz
32
28
24
20
16
12
8
Pout
Gain
4
PAE
0
0
3
6
9
12
15
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +12V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 41 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+9 Vdc
0 to -2 Vdc
+2V to +4V
+20 dBm
175 °C
3.69 W
24.4 °C/W
-65 to 150°C
-55 to 85 °C
HMC659
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
Power Compression @ 7 GHz
32
28
24
20
16
12
8
Pout
Gain
4
PAE
0
0
3
6
9
12
15
INPUT POWER (dBm)
3
Power Dissipation
10
Max Pdis @ 85C
8
2 GHz
12 GHz
6
4
2
0
-10
-6
-2
2
6
10
14
18
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
299
300
301
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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