HMC659_09 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz

v01.0708
Typical Applications
The HMC659 is ideal for:
• Telecom Infrastructure
3
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC659
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
Features
P1dB Output Power: +26.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
Die Size: 3.115 x 1.630 x 0.1 mm
General Description
The HMC659 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
15 GHz. The amplifier provides 19 dB of gain,
+35 dBm output IP3 and +26.5 dBm of output power
at 1 dB gain compression while requiring 300 mA
from a +8V supply. Gain flatness is excellent at ±0.5
dB from DC to 10 GHz making the HMC659 ideal for
EW, ECM, Radar and test equipment applications.
The HMC659 amplifier I/Os are internally matched
to 50 ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of mini-
mal length 0.31 mm (12 mils).
3 - 110
Electrical Specifications, T_A = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter
Min.
Typ. Max.
Min.
Typ. Max. Min.
Typ.
Frequency Range
DC - 6
6 - 11
11 - 15
Gain
16.1 19.1
15.5 18.5
14.8
17.8
Gain Flatness
±0.5
±0.15
±0.6
Gain Variation Over Temperature
0.013
0.018
0.025
Input Return Loss
19
17
15
Output Return Loss
18
17
15
Output Power for 1 dB Compression (P1dB)
23
25.5
24
26.5
22.5
25
Saturated Output Power (Psat)
26
27
27
Output Third Order Intercept (IP3)
35
32
29
Noise Figure
2.5
2
3
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)
300
300
300
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dBc
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com