HMC635_09 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz

v00.1107
Absolute Maximum Ratings
Drain Bias Voltage
(Vdd1, Vdd2, Vdd3, Vdd4)
Gate Bias Voltage (Vgg1,Vgg2)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 16.16 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5.5 Vdc
-3 to 0 Vdc
15 dBm
175 °C
1.45 W
61.87 °C/W
-65 to +150 °C
-55 to +85 °C
HMC635
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Typical Supply Current vs. Vdd
Vdd (V)
4.5
Idd (mA)
2
277
5.0
280
5.5
286
Note: Amplifier will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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