HMC635_09 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz

v00.1107
Typical Applications
2
The HMC635 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• LO Driver for Mixers
• Military & Space
Functional Diagram
HMC635
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Features
Gain: 19.5 dB
P1dB: +23 dBm
Output IP3: +29 dBm
Saturated Power: +24 dBm @ 15% PAE
Supply Voltage: +5V @ 280 mA
50 Ohm Matched Input/Output
Die Size: 1.95 x 0.84 x 0.10 mm
General Description
The HMC635 is a GaAs PHEMT MMIC Driver
Amplifier die which operates between 18 and 40 GHz.
The amplifier provides 19.5 dB of gain, +29 dBm
Output IP3, and +23 dBm of output power at 1 dB
gain compression, while requiring 280 mA from a +5V
supply. Ideal as a driver amplifier for microwave radio
applications, or as an LO driver for mixers operating
between 18 and 40 GHz, the HMC635 is capable of
providing up to +24 dBm of saturated output power at
15% PAE. The amplifier’s I/Os are DC blocked and
internally matched to 50 Ohms making it ideal for
integration into Multi-Chip-Modules (MCMs). All data
is taken with die connected at input and output RF
ports via two 1 mil wedge bonds of 500μm length.
2 - 58
Electrical Specifications, T_A = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA ^[1]
Parameter
Min. Typ. Max. Min. Typ.
Frequency Range
18 - 36
36 - 40
Gain
16
19.5
16
19
Gain Variation Over Temperature
0.045 0.060
0.045
Input Return Loss
15
9
Output Return Loss
13
12
Output Power for 1 dB Compression (P1dB)
19
23
14
19
Saturated Output Power (Psat)
24
20
Output Third Order Intercept (IP3)
24
29
21
27
Noise Figure
8
7
Supply Current (Idd1 + Idd2 + Idd3 + Idd4)
280
280
[1]Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical.
Max.
0.050
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com