HMC633LC4 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC DRIVER AMPLIFIER, 5.5 - 17 GHz

v00.1107
HMC633LC4
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5.5 - 17 GHz
Gain, Power & Output IP3
vs. Gate Voltage @ 11 GHz
35
210
Idd
30
180
25
150
20
15
-0.8
-0.78
-0.76
-0.74 -0.72
Vgg (V)
120
Gain
P1dB
Psat
IP3
90
-0.7 -0.68
5
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3,
Vdd4)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 11.08 mW/°C above 85 °C)
Thermal Resistance
(channel to package bottom)
Storage Temperature
Operating Temperature
+5.5 Vdc
-3 to 0 Vdc
+5 dBm
175 °C
0.99 W
90.23 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
4.5
177
5.0
180
5.5
182
Note: Amplifier will operate over full voltage ranges shown above
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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