HMC619 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz

v00.0807
Power Compression @ 2 GHz
32
28
Pout
Gain
24
PAE
20
16
12
8
4
0
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
INPUT POWER (dBm)
Power Compression @ 10 GHz
32
28
Pout
Gain
24
PAE
20
16
12
8
4
0
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +10 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 98 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+13 Vdc
-2.5 to 0 Vdc
+4V to +6V
+27 dBm
150 °C
6.37 W
10.2 °C/W
-65 to +150 °C
-55 to +85 °C
HMC619
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Power Compression @ 5 GHz
32
28
Pout
Gain
24
PAE
20
16
12
8
4
0
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
INPUT POWER (dBm)
3
Power Dissipation
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
-10
-5
Max Pdis @ 85C
2 GHz
6 GHz
0
5
10
15
20
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Vdd (V)
+11.5
+12.0
+12.5
Idd (mA)
299
300
301
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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