HMC619 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz

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Typical Applications
The HMC619 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC619
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Features
P1dB Output Power: +28 dBm
Gain: 12 dB
Output IP3: +37 dBm
Supply Voltage: +12V @ 300 mA
50 Ohm Matched Input/Output
Die Size: 3.38 x 2.05 x 0.1 mm
General Description
The HMC619 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
10 GHz. The amplifier provides 12 dB of gain,
+37 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 300 mA
from a +12V supply. Gain flatness is excellent at ±0.4
dB from DC to 7 GHz making the HMC619 ideal for
EW, ECM, Radar and test equipment applications.
The HMC619 amplifier I/Os are internally matched
to 50 ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of mini-
mal length 0.31 mm (12 mils).
3 - 114
Electrical Specifications, T_A = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA*
Parameter
Min.
Typ. Max.
Min.
Typ. Max. Min.
Typ.
Frequency Range
DC - 3
3-7
7 - 10
Gain
9.8
12.8
9.0
12
8.5
11.5
Gain Flatness
±0.3
±0.3
±0.4
Gain Variation Over Temperature
0.014
0.016
0.023
Input Return Loss
12.5
12.5
13.5
Output Return Loss
21
25
17
Output Power for 1 dB Compression (P1dB) 25.5
28
25
27.5
24
26.5
Saturated Output Power (Psat)
28.5
28
27.5
Output Third Order Intercept (IP3)
41
37
32
Noise Figure
4
5
7
Supply Current
(Idd) (Vdd= 12V Typ.)
300
300
300
* Adjust Vgg1 between -2V to 0V to achieve Idd= 300 mA typical.
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com