HMC606LC5 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz

HMC606LC5
v00.0407
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Absolute Maximum Ratings
Vcc1= Vcc2= 5V
RF Input Power (RFin)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
7V
+15 dBm
175 °C
0.55 W
169.5 °C/W
-65 to +150 °C
-40 to +85 °C
5
Typical Supply Current vs. Vcc1, Vcc2
Vcc, Vcc2 (V)
+4.5
+5.0
+5.5
Icc + Icc2 (mA)
53
64
71
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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