HMC594LC3B Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz

v00.0307
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFin)(Vdd = +6.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 10 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
7 Vdc
+15 dBm
150 °C
0.65 W
100 °C/W
-65 to +150 °C
-40 to +85 °C
HMC594LC3B
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
5
Typical Supply Current vs. Vdd
Vdd (V)
+5.5
+6.0
+6.5
Idd (mA)
97
100
103
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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