HMC591LP5_09 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz

v02.0107
HMC591LP5 / 591LP5E
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Gain & Power vs. Supply Current @ 8 GHz
36
32
28
Gain
P1dB
Psat
24
20
16
940
1140
Idd SUPPLY CURRENT (mA)
1340
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
0
-20
+25C
+85C
-40C
-40
-60
-80
6
7
8
9
10
FREQUENCY (GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 75 °C)
(derate 104.3 mW/°C above 75 °C)
10.43 W
Thermal Resistance
(channel to package bottom)
9.59 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Gain & Power vs. Supply Voltage @ 8 GHz
36
32
28
Gain
P1dB
Psat
24
20
16
6.5
7
7.5
Vdd SUPPLY VOLTAGE (Vdc)
11
Power Dissipation
10
9
8
7
6
-14 -10
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
-6
-2
2
6
INPUT POWER (dBm)
10
14
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
1350
+7.0
1340
+7.5
1330
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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