HMC591LP5_09 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz

HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
11
Typical Applications
The HMC591LP5 / HMC591LP5E is ideal for use as a
power amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space
Features
Saturated Output Power: +33 dBm @ 20% PAE
Output IP3: +41 dBm
Gain: 18 dB
DC Supply: +7.V @ 1340 mA
50 Ohm Matched Input/Output
QFN Leadless SMT Packages, 25 mm²
Functional Diagram
General Description
The HMC591LP5 & HMC591LP5E are high dynamic
range GaAs PHEMT MMIC 2 Watt Power Amplifiers
which operate from 6 to 9.5 GHz. The amplifier
provides 18 dB of gain, +33 dBm of saturated power,
and 19% PAE from a +7V supply. This 50 Ohm mat-
ched amplifier does not require any external
components and the RF I/Os are DC blocked for
robust operation. For applications which require
optimum OIP3, Idd should be set for 940 mA, to
yield +41 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 1340 mA,
to yield +33 dBm Output P1dB.
Electrical Specifications, T_A = +25° C, Vdd = +7V, Idd = 1340 mA^[1]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Frequency Range
6-8
6 - 9.5
Gain
16
19
15
18
Gain Variation Over Temperature
0.05
0.05
Input Return Loss
14
12
Output Return Loss
12
10
Output Power for 1 dB
Compression (P1dB)
30
32
30
33
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)^[2]
32.5
33
41
41
Supply Current (Idd)
1340
1340
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com