HMC479MP86_10 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz

v03.0810
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +4.3 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 10.8 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
+6 Vdc
100 mA
+17 dBm
150 °C
0.702 W
92.6 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC479MP86 / 479MP86E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
ELECTROSTATIC SENSITIVE DEVICE
8
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATIBLE WITH THE “MICRO-X PACKAGE”
Package Information
Part Number
Package Body Material
HMC479MP86
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC479MP86E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking
479
479
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
8-4