HMC462_10 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz

Outline Drawing
v04.1210
HMC462
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
1
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled and matched to 50 Ohms.
Interface Schematic
2
Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required
3
Die
Bottom
RFOUT
GND
This pad is AC coupled and matched to 50 Ohms.
Die bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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