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HMC462_10 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz
v04.1210
HMC462
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
1
P1dB vs. Temperature
20
17
14
Psat vs. Temperature
25
22
+25C
+85C
-55C
19
11
8
+25C
+85C
-40C
5
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
16
13
10
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Output IP3 vs. Temperature
30
27
24
21
+25C
+85C
-40C
18
15
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Gain, Power, Noise Figure & Supply
Current vs. Supply Voltage @ 10 GHz
20
74
16
70
12
66
8
62
Gain
4
P1dB
Noise Figure
Idd 58
0
54
4.5
5
5.5
6
6.5
7
7.5
8
Vdd SUPPLY VOLTAGE (Vdc)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 50 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+9 Vdc
+18 dBm
175 °C
4.5 W
41 °C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
+7.0
+7.5
+8.0
Idd (mA)
62
63
64
65
66
67
1-3
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com