HMC441LC3B Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz

v00.1104
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +20 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 10 mW/°C above 85 °C)
0.65 W
Thermal Resistance
(channel to ground paddle)
100 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
HMC441LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
8
Typical Supply Current vs. Vdd
Vdd (V)
+5.5
+5.0
Idd (mA)
96
95
+4.5
94
Note: Amplifier will operate over full voltage range shown above
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/"3%26%(!.$,).'02%#!54)/.3
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: COLD FLASH OVER Ni.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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