HMC326MS8G Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz

v04.1203
MICROWAVE CORPORATION
HMC326MS8G
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage Range (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 11.49 mW/°C above 85 °C)
0.747 W
Thermal Resistance
(junction to ground paddle)
87 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Outline Drawing
8
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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