HMC326MS8G Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz

v04.1203
MICROWAVE CORPORATION
HMC326MS8G
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
8
Typical Applications
The HMC326MS8G is ideal for:
• Microwave Radios
• Broadband Radio Systems
• Wireless Local Loop Driver Amplifier
Functional Diagram
Features
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5.0V
Ultra Small Package: MSOP8G
General Description
The HMC326MS8G is a high efficiency GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC driver
amplifier which operates between 3.0 and 4.5 GHz.
The amplifier is packaged in a low cost, surface mount
8 leaded package with an exposed base for improved
RF and thermal performance. The amplifier provides
21 dB of gain and +26 dBm of saturated power from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when the
amplifier is not in use. Internal circuit matching was
optimized to provide greater than 40% PAE.
Electrical Specifications, T_A = +25° C, Vs = 5V, Vpd = 5V
Parameter
Min.
Typ.
Frequency Range
3.0 - 4.5
Gain
18
21
Gain Variation Over Temperature
0.025
Input Return Loss
12
Output Return Loss
7
Output Power for 1dB Compression (P1dB)
21
23.5
Saturated Output Power (Psat)
26
Output Third Order Intercept (IP3)
32
36
Noise Figure
5
Supply Current (Icc)
Vpd = 0V / 5V
0.001 / 130
Control Current (Ipd)
7
Switching Speed
tOn/tOff
10
Max.
0.035
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
8 - 98
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com