English
Language : 

HMC753LP4E_11 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz
v03.0111
7
P1dB vs. Temperature [1]
25
20
15
10
+25C
+85C
-40C
5
0
1
3
5
7
9
11
FREQUENCY (GHz)
HMC753LP4E
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
Psat vs. Temperature [1]
24
20
16
12
+25C
+85C
-40C
8
4
1
3
5
7
9
11
FREQUENCY (GHz)
7-3
Reverse Isolation vs. Temperature
0
-10
+25C
+85C
-40C
-20
-30
-40
-50
-60
1
3
5
7
9
11
FREQUENCY (GHz)
Power Compression @ 6 GHz [1]
24
20
Pout
Gain
PAE
16
12
8
4
0
-4
-20
-15
-10
-5
0
5
INPUT POWER (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 6 GHz [1]
22
7
20
6
18
5
16
4
14
3
12
2
10
1
8
0
4.5
5
5.5
Vdd (V)
[1] Board loss subtracted out for gain, power and noise figure measurement
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com