HMC753LP4E_11 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz

v03.0111
7
Typical Applications
This HMC753LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC753LP4E
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
Features
Noise Figure: 1.5 dB @ 4 GHz
Gain: 17 dB
P1dB Output Power: +18 dBm
Supply Voltage: +5V @ 55 mA
Output IP3: +30 dBm
50 Ohm matched Input/Output
24 Lead Plastic 4x4mm SMT Package: 16mm²
General Description
The HMC753LP4E is a GaAs MMIC Low Noise
Wideband Amplifier housed in a leadless 4x4 mm
plastic surface mount package. The amplifier oper-
ates between 1 and 11 GHz, providing up to 16.5 dB
of small signal gain, 1.5 dB noise figure, and output
IP3 of +30 dBm, while requiring only 55 mA from a
+5V supply. The P1dB output power of up to +18
dBm enables the LNA to function as a LO driver for
balanced, I/Q or image reject mixers. The HMC-
753LP4E also features I/Os that are DC blocked and
internally matched to 50 Ohms, making it ideal for
high capacity microwave radios or VSAT applications.
This versatile LNA is also available in die form as the
HMC-ALH444.
Electrical Specifications, T_A = +25° C, Vdd= +5V, Idd = 55 mA^[2]
Parameter
Min.
Typ.
Max.
Min.
Frequency Range
1-6
Gain
14
16.5
10
Gain Variation over Temperature
0.004
Noise Figure
1.5
2
Input Return Loss
11
Output Return Loss
18
Output Power for 1 dB Compression
18
Saturated Output Power (Psat)
20
Output Third Order Intercept (IP3)
30
Supply Current (Idd)
(Vdd = 5V, set Vgg2 = 1.5V, Vgg1 = -0.8V Typ.)
55
Typ.
6 - 11
14
0.008
2
8
12
15
17
28
55
Max.
2.7
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
dBm
mA
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]