HMC462LP5 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz

MICROWAVE CORPORATION
v00.0304
HMC462LP5
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
8
P1dB^Gv^as^A. T^sem^Mp^Mer^Ia^Ctu^Sre^{UB-HARMONICALLY} P^Ps^Uat^Mv^Ps.^ETe^Dm^Mpe^Ir^Xat^Eu^Rre ^{17 - 25 GHz}
20
20
19
19
18
18
17
17
16
16
15
15
14
14
13
13
12
12
11
11
10
+25C
9
+85C
-40C
8
10
+25C
9
+85C
-40C
8
7
7
6
6
5
5
0 2 4 6 8 10 12 14 16 18 20 22
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
30
29
28
27
26
25
24
23
22
21
20
+25C
19
+85C
-40C
18
17
16
15
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Gain, Power, Noise Figure & Supply
Current vs. Supply Voltage @ 10 GHz
22
20
18
16
14
12
10
8
6
4
2
0
4.5
Gain
P1dB
Noise Figure
5
Vdd (Vdc)
72
70
68
66
64
62
60
58
Idd
56
54
52
50
5.5
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +23 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 50 mW/°C above 85 °C)
3.25 W
Thermal Resistance
(channel to ground paddle)
20 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
+7.5
+8.0
+8.5
Idd (mA)
66
67
68
71
72
73
8 - 258
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
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