HMC462LP5 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz

v00.0304
MICROWAVE CORPORATION
HMC462LP5
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
8
Typical Applications
The HMC462LP5 Wideband LNA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military EW, ECM & C³I
• Test Instrumentation
• Fiber Optics
Functional Diagram
Features
Noise Figure: 2.5 dB @ 10 GHz
Gain: 13 dB
P1dB Output Power: +14.5 dBm @ 10 GHz
Self-Biased: +5.0V @ 66 mA
50 Ohm Matched Input/Output
25 mm² Leadless SMT Package
General Description
The HMC462LP5 is a GaAs MMIC PHEMT Low
Noise Distributed Amplifier in a leadless 5 x 5 mm
surface mount package which operates between
2 and 20 GHz. The self-biased amplifier provides
13 dB of gain, 2.5 to 3.5 dB noise figure and
+14.5 dBm of output power at 1 dB gain com-
pression while requiring only 66 mA from a single
+5V supply. Gain flatness is excellent from 6 - 18
GHz making the HMC462LP5 ideal for EW, ECM
RADAR and test equipment applications. The
wideband amplifier I/Os are internally matched to
50 Ohms and are internally DC blocked.
Electrical Specifications, T_A = +25° C, Vdd= 5V
Parameter
Min.
Typ.
Max.
Min.
Frequency Range
2.0 - 6.0
Gain
12
14
11
Gain Flatness
±0.5
Gain Variation Over Temperature
0.015 0.025
Noise Figure
3.0
4.0
Input Return Loss
15
Output Return Loss
12
Output Power for 1 dB Compression (P1dB) 12
15
11
Saturated Output Power (Psat)
17
Output Third Order Intercept (IP3)
26
Supply Current
(Idd) (Vdd= 5V)
66
Typ.
6.0 - 14.0
13
±0.5
0.02
2.5
13
12
14
16
25
66
Max.
0.03
4.0
Min.
Typ.
Max.
14.0 - 20.0
10
12
±0.5
0.03
0.04
4.0
6.0
11
8
9
12
15
22
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
66
mA
8 - 256
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com