HMC434 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – SMT GaAs HBT MMIC DIVIDE-BY-8, DC - 8.0 GHz

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MICROWAVE CORPORATION
10
Output Voltage Waveform,
Pin= 0 dBm, Fout= 882 MHz, T= 25 °C
300
250
200
150
100
50
0
-50
-100
-150
-200
-250
-300
22.7 22.9 23.1 23.3 23.5 23.7 23.9 24.1 24.3 24.5 24.7
TIME (nS)
Outline Drawing
HMC434
SMT GaAs HBT MMIC
DIVIDE-BY-8, DC - 8.0 GHz
Absolute Maximum Ratings
RF Input (Vcc= +3.0V)
+15 dBm
Vcc
+3.5V
Maximum Channel Temperature
135 °C
Continuous Pdiss (T=85 °C)
(derate 5.35mW/°C above 85 °C)
Storage Temperature
268 mW
-65 to +150 °C
Operating Temperature
-40 to + 85 °C
DC blocking capacitors are required at RF input and RF output ports.
Choose value for lowest frequency of operation.
Typical Supply Current vs. Vcc
Vcc (V)
Icc (mA)
2.70
50
3.0
62
3.30
74
Note: Divider will operate over full voltage range shown above
10 - 86
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com