HMC495LP3 Datasheet, PDF (2/12 Pages) Hittite Microwave Corporation – SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz

v02.0705
HMC495LP3 / 495LP3E
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Electrical Specifications, (continued)
Parameter
RF Output
RF Frequency Range
RF Return Loss
LO Input
LO Frequency Range
LO Input Power
LO Port Return Loss
Baseband Input Port
Conditions
With 68 Ohm shunt resistor on LO port.
With 68 Ohm shunt resistor on LO port.
Min.
Typ.
Max. Units
0.25
16
3.8
GHz
dB
0.25
-6
0
7
3.8
GHz
+6
dBm
dB
Baseband Port Bandwidth
With 50Ω source & external 10 pF shunt cap to ground.
DC
Refer to HMC495LP3 Application Circuit.
250
MHz
Baseband Input DC Voltage (Vbbdc)
This parameter can be varied in order to optimize
1.0
1.15
1.2
V
the device performance over temperature and/or supply.
Baseband Input DC Bias Current (Ibbdc)
Single-ended.
40
μA
Single-ended Baseband Input Capacitance
De-embed to the lead of the device.
0.5
pF
DC Power Requirements
See Test Conditions Below
Supply Voltage (Vcc1, Vcc2, Vb1, Vb2)
3
3.3
3.6
V
Supply Current (Icc1, Icc2, Ib1, Ib2)
108
mA
Test Conditions: Unless Otherwise Specified, the Following Test Conditions Were Used
Parameter
Temperature
Baseband Input Frequency
Baseband Input DC Voltage (Vbbdc)
Baseband Input AC Voltage
(Peak to Peak Differential, I and Q)
Baseband Input AC Voltage for OIP3 Measurement (Peak to Peak Differential, I and Q)
Frequency Offset for Output Noise Measurements
Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2)
LO Input Power
LO Input Mode
Mounting Configuration
Sideband & Carrier Feedthrough
Condition
+25 °C
200 kHz
1.15V
800 mV
400 mV per tone @ 150 & 250 kHz
20 MHz
3.3V
0 dBm
Single-Ended
Refer to HMC495LP3 Application Schematic Herein
Uncalibrated
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from
the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband
and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature”
Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T=
-40 °C, +25 °C, and +85 °C.
The “Calibrated, + 25 °C” Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude
balance and I/Q phase offset (skew) at +25 °C, and at each LO input power level. The +25 °C adjustment settings
were held constant during tests over temperature. The “Calibrated, over Temperature” plots represent the worst case
calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC
offsets at +25 °C, and at each LO input power level. The +25 °C adjustment settings were held constant during tests
over temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier Suppression levels
measured at T= -40 °C, +25 °C, and +85 °C.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
8
8-3