HMC770LP4BE Datasheet, PDF (14/14 Pages) Hittite Microwave Corporation – GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz

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HMC770LP4BE
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
Evaluation PCB - 75 Ohm
9
List of Materials for Evaluation PCB ^[1]
Item
Description
J1, J2
F-Connector
J3 - J5
DC Pin
C1 - C4, C7, C13
10 nF Capacitor, 0603 Pkg.
C5, C6, C8 - C12,
C16
100 pF Capacitor, 0402 Pkg.
C10, C12
10 nF Capacitor, 0402 Pkg.
C14, C15
2.2 μF Capacitor, Tantalum
L1, L2
1 uH Inductor, 0805 Pkg.
R1 (Rbias)
200 Ohm Resistor, 0402 Pkg.
R2, R3
T1, T2 ^[2]
0 Ohm Resistor, 0805 Pkg.
1:1 Transformer
U1
PCB ^[3]
HMC770LP4BE Gain Block Amplifier
121735 Evaluation PCB
[1] When requesting an evaluation board, please reference the
appropriate evaluation PCB number listed in the table “Components
for Selected Options.”
[2] Please refer to “Components for Selected Options” table for
values
[3] Circuit Board Material: Rogers 4350
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 75 ohm impedance while the
package ground leads and exposed paddle should
be connected directly to the ground plane similar
to that shown. A sufficient number of via holes
should be used to connect the top and bottom
ground planes. The evaluation circuit board shown
is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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