HMC770LP4BE Datasheet, PDF (10/14 Pages) Hittite Microwave Corporation – GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz

v00.0909
HMC770LP4BE
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
Absolute Maximum Ratings
Drain Bias Voltage
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T=85 °C)
(derate 33.21 mW/ °C Above +85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
5.5 Vdc
+20 dBm
150 °C
2.16W
30.11 °C/W
-65 to 150 °C
-40 to +85 °C
Class 1A
Outline Drawing
9
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION
MOLDED PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY.
3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR
HEIGHT SHALL BE 0.05mm MAX.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
PCB LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
HMC770LP4BE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
MSL Rating
MSL3 ^[2]
Package Marking ^[1]
H770
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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